| PART |
Description |
Maker |
| APT12057B2LL APT12057LLL |
POWER MOS 7 1200V 22A 0.570 Ohm
|
Advanced Power Technology
|
| APT12057JLL |
POWER MOS 7 1200V 19A 0.570 Ohm
|
Advanced Power Technology
|
| APT12031JLL |
POWER MOS 7 1200V 30A 0.310 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
| ST49C101ACF8-04 ST49C101ACP8-03 ST49C101ACP8-01 ST |
MAX II CPLD 570 LE 256-FBGA
MAX II CPLD 570 LE 256-MBGA
MAX II CPLD 570 LE 144-TQFP 变频
|
ALPS Electric Co., Ltd.
|
| AD7665ASTZRL AD7665ACPZ AD7650 AD7660 AD7673 |
16-Bit 570 kSPS Bipolar PulSAR® ADC 4-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL/PARALLEL ACCESS, PQFP48
16-Bit, 570 kSPS CMOS ADC
16-Bit, 570 kSPS CMOS ADC
|
Analog Devices, Inc.
|
| B39571-B3826-H310 B3826 |
1 FUNCTIONS, 570 MHz, SAW FILTER
SAW Components Low-loss Filter 570,00 MHz
|
EPCOS AG
EPCOS[EPCOS]
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 22N20G-TN3-T 22N20G-TN3-R 22N20L-TA3-T 22N20L-TN3- |
22A, 200V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RF1S22N10SM RFP22N10 |
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
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